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| INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor 2SB1024 DESCRIPTION *Low Collector Saturation Voltage: VCE(sat)= -1.5V(Max.)@ IC= -3A *High DC Current Gain: hFE= 2000(Min)@ (VCE= -2V, IC= -1A) *Complement to Type 2SD1414 APPLICATIONS *Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @Ta=25 PC Collector Power Dissipation @TC=25 TJ Tstg Junction Temperature Storage Temperature 20 150 -55~150 VALUE -100 -80 -5 -4 -6 -0.3 2 W UNIT V V V A A A isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO VCE(sat) VBE(sat) ICBO IEBO hFE-1 hFE-2 PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain CONDITIONS IC= -10mA ; IB= 0 IC= -3A; IB= -6mA IC= -3A; IB= -6mA VCB= -100V; IE= 0 VEB= -5V; IC= 0 IC= -1A; VCE= -2V IC= -3A; VCE= -2V 2000 1000 MIN -80 TYP. 2SB1024 MAX UNIT V -1.5 -2.0 -20 -2.5 V V A mA Switching Times Turn-on Time Storage Time Fall Time VCC -30V, RL= 10, IC= -3A; IB1= -IB2= -6mA, 0.15 0.80 0.40 s s s ton tstg tf isc Websitewww.iscsemi.cn 2 |
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